Integrated circuit including memory cell and method of designing the same

ABSTRACT

An integrated circuit includes: a first wiring layer on which a first bit line pattern and a positive power supply pattern, a first power supply line landing pad, and a first word line landing pad are formed; a second wiring layer on which a first negative power supply pattern connected to the first power supply line landing pad, and a first word line pattern connected to the first word line landing pad are formed; a third wiring layer on which a second negative power supply pattern connected to the first negative power supply pattern, and a second word line landing pad connected to the first word line pattern are formed; and a fourth wiring layer on which a second word line pattern, connected to the second word line landing pad, are formed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based on and claims priority from Korean PatentApplication Nos. 10-2020-0096117, filed on Jul. 31, 2020, and10-2021-0031462, filed on Mar. 10, 2021, in the Korean IntellectualProperty Office, the disclosures of which are incorporated by referenceherein in their entirety.

BACKGROUND

The disclosure relates to an integrated circuit, and more particularly,to an integrated circuit including a memory cell.

Due to the demand for high degree of integration of integrated circuitsand the development of semiconductor processes, the widths, intervals,and/or heights of lines included in an integrated circuit may decrease,and parasitic elements and resistance of the lines may increase.Accordingly, a driving characteristic of a path providing a voltage to astandard cell included in an integrated circuit may be deteriorated. Inaddition, a power supply voltage of the integrated circuit may bereduced for reduced power consumption, high operating speed, or thelike, and accordingly, the effect of parasitic elements and resistanceof the lines on the integrated circuit may become more significant. Inspite of the parasitic elements and resistance, a memory devicemanufactured by a semiconductor manufacturing process is still requiredto stably provide high performance according to requirements of variousapplications.

SUMMARY

The example embodiment of the inventive concept relates to an integratedcircuit, and provides an integrated circuit that stably supplies avoltage to a memory cell.

According to example embodiments, there is provided an integratedcircuit including a plurality memory cells. The integrated circuit mayinclude a first wiring layer including: a first bit line pattern and apositive power supply pattern extending in a first direction, thepositive power supply pattern being configured to provide a positivesupply voltage; and a plurality of first power supply line landing padsconfigured to provide a negative supply voltage, and a plurality offirst word line landing pads configured to provide a word line voltage.The integrated circuit may further include a second wiring layerincluding: a first negative power supply pattern extending in a seconddirection, and connecting first power supply line landing pads, whichare adjacent to each other in the second direction among the pluralityof first power supply line landing pads, to each other, and configuredto provide the negative supply voltage; and a plurality of first wordline patterns extending in the second direction, connected to theplurality of first word line landing pads, and configured to provide theword line voltage. The integrated circuit may also include a thirdwiring layer including: a second negative power supply pattern connectedto the first negative power supply pattern; and a plurality of secondword line landing pads connected to the plurality of first word linepatterns. The integrated circuit may further include a fourth wiringlayer including: a plurality of second word line patterns extending inthe second direction, connected to the plurality of second word linelanding pads, and configured to provide the word line voltage.

According to example embodiments, there is provided an integratedcircuit including a plurality memory cells. The integrated circuit mayinclude a bit line structure including: a first bit line pattern formedon a first wiring layer, configured to provide a bit line voltage to thememory cells, and extending in a first direction. The integrated circuitmay further include a word line structure including: a plurality offirst word line landing pads formed on the first wiring layer, andconfigured to provide a word line voltage to the memory cells; aplurality of first word line patterns formed on a second wiring layer,extending in a second direction perpendicular to the first direction,and connected to the plurality of first word line landing pads; aplurality of second word line landing pads formed on a third wiringlayer and connected to the plurality of first word line patterns; and aplurality of second word line patterns formed on a fourth wiring layer,extending in the second direction, and connected to the plurality ofsecond word line landing pads. The integrated circuit may also include anegative power supply line structure including: a plurality of firstpower supply line landing pads formed on the first wiring layer, andconfigured to provide a negative supply voltage to the memory cells; afirst negative power supply pattern formed on the second wiring layer,extending in the second direction, and connecting first power supplyline landing pads, which are adjacent to each other in the seconddirection among the plurality of first power supply line landing pads,to each other; and a second negative power supply pattern formed on thethird wiring layer and connected to the first negative power supplypattern.

According to example embodiments, there is provided a method ofdesigning an integrated circuit including a plurality memory cells. Themethod may include: generating a path configured to provide a word linevoltage to the memory cells; generating a path configured to provide anegative supply voltage to the memory cells; and generating a pathconfigured to provide a bit line voltage to the memory cells. Here, thegenerating the path configured to provide the negative supply voltage tothe memory cells may include: generating, on a first wiring layer, aplurality of first power supply line landing pads configured to providethe negative supply voltage to the memory cells; generating, on a secondwiring layer, a first negative power supply pattern extending in asecond direction, and connecting first power supply line landing pads,which are adjacent to each other in the second direction among theplurality of first power supply line landing pads, to each other; andgenerating, on a third wiring layer, a second negative power supplypattern connected to the first negative power supply pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the inventive concept will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1 is a diagram for describing an integrated circuit including amixed-rows block, according to an example embodiment;

FIG. 2 is a circuit diagram illustrating a memory cell according to anexample embodiment;

FIG. 3 is a cross-sectional view illustrating a wiring layer accordingto an example embodiment;

FIG. 4 is a plan view showing an arrangement of a memory cell arrayaccording to an example embodiment;

FIG. 5 is a plan view showing a layout of a memory cell array accordingto an example embodiment;

FIGS. 6A and 6B are cross-sectional views showing examples of structuresof a cell according to an example embodiment;

FIGS. 6C and 6D are cross-sectional views showing examples of a cellhaving a gate-all-around (GAA) structure, according to an exampleembodiment;

FIG. 7 is a plan view illustrating a wiring layer of a memory cell arrayaccording to an example embodiment;

FIG. 8A is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 8B is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 9 is a plan view illustrating a wiring layer of a memory cell arrayaccording to an example embodiment;

FIG. 10 is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 11A is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 11B is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 12 is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 13 is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 14A is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 14B is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 15 is a plan view illustrating a wiring layer of a memory cellarray according to an example embodiment;

FIG. 16 is a flowchart illustrating a method of manufacturing anintegrated circuit, according to an example embodiment;

FIG. 17 is a flowchart showing an example of operation S400 of FIG. 16,according to an example embodiment;

FIG. 18 is a flowchart showing an example of operation S440 of FIG. 17,according to an example embodiment;

FIG. 19 is a block diagram of a system-on-chip (SoC) according to anexample embodiment; and

FIG. 20 is a block diagram of a computing system including a memorystoring a program, according to an example embodiment.

DETAILED DESCRIPTION

Hereinafter, various embodiments of the inventive concept will bedescribed with reference to accompanying drawings. The embodimentsdescribed herein are all example embodiments, and thus, the inventiveconcept is not limited thereto and may be realized in various otherforms.

It will be understood that when an element or layer is referred to asbeing “over,” “above,” “on,” “below,” “under,” “beneath,” “connected to”or “coupled to” another element or layer, it can be directly over,above, on, below, under, beneath, connected or coupled to the otherelement or layer or intervening elements or layers may be present. Incontrast, when an element is referred to as being “directly over,”“directly above,” “directly on,” “directly below,” “directly under,”“directly beneath,” “directly connected to” or “directly coupled to”another element or layer, there are no intervening elements or layerspresent.

FIG. 1 is a diagram for describing a memory device 100 according to anexample embodiment. Referring to FIG. 1, the memory device 100 mayinclude a precharge circuit 110, a row decoder 120, a memory cell array130, a column decoder 140 and a data buffer 150. Although not shown inFIG. 1, in some embodiments, the memory device 100 may further includean address decoder, a read circuit, a data input/output circuit, or thelike.

The memory device 100 may receive a command CMD (not shown), an address,and data from the outside. For example, the memory device 100 mayreceive the command CMD (e.g., a write command) instructing to write, anaddress (e.g., a write address), and data (e.g., write data), and storethe received data in an area corresponding to the address. In addition,the memory device 100 may receive another command CMD (e.g., a readcommand) instructing to read and an address (e.g., a read address), andmay output data stored in an area corresponding to this address to theoutside. The memory device 100 may be manufactured by a semiconductormanufacturing process, and may be a stand-alone memory or an embeddedmemory manufactured with other components by the semiconductormanufacturing process, as will be described below with reference to FIG.16.

The precharge circuit 110 may selectively provide a positive supplyvoltage VDD to bit lines in response to a precharge control signal PRE.

The row decoder 120 may receive a row address X-ADD, and may activateone word line from among first to n-th word lines WL1 to WLn accordingto the row address X-ADD. In some embodiments, the memory device 100 mayinclude an address decoder, and the address decoder may generate the rowaddress X-ADD from an address received together with a command CMD.

The column decoder 140 may receive a column address Y-ADD, and mayselect some of a plurality of bit lines BLt_1 to BLc_n according to thecolumn address Y-ADD. In some embodiments, the memory device 100 mayinclude an address decoder, and the address decoder may generate thecolumn address Y-ADD from the address received together with the commandCMD.

The memory cell array 130 may include a plurality of memory cells (e.g.,10). In some embodiments, the plurality of memory cells 10 included inthe memory cell array 130 may be volatile memory cells such as staticrandom access memory (SRAM) cells, dynamic random access memory (DRAM)cells, or the like. In some embodiments, the plurality of memory cells10 included in the memory cell array 130 may be non-volatile memorycells such as flash memory cells, resistive random access memory (RRAM)cells, or the like. Although example embodiments will be described withreference mainly to an SRAM cell, the example embodiments are notlimited thereto.

Referring to FIG. 1, each of the plurality of memory cells 10 includedin the memory cell array 130 may be connected to one of the first ton-th word lines WL1 to WLn sequentially arranged in the memory cellarray 130 (wherein n is an integer greater than 1). In addition, each ofthe plurality of memory cells 10 included in the memory cell array 130may be connected to at least one of the plurality of bit lines BLt_1 toBLc_n.

Some of the plurality of memory cells 10 may be selected by an activatedword line among the first to n-th word lines WL1 to WLn. For example,memory cells 10 connected to the first word line WL1 may be selected bythe first word line WL1, which is activated, and according to states ofthe plurality of bit lines BLt_1 to BLc_n, data (i.e., write data) maybe written to the selected memory cells 10 or signals corresponding todata (i.e., read data) stored in the selected memory cells 10 may beoutput through the plurality of bit lines BLt_1 to BLc_n.

The data buffer 150 may temporarily store data (i.e., write data) to bewritten to the plurality of memory cells 10, or may temporarily storedata (i.e., read data) read from the plurality of memory cells 10.

As the degree of integration of the memory cell array 130 increases, theresistance of lines connected to the memory cell array 130 may increase.For example, due to the increased resistance of lines, delay may occurin a signal applied to a word line, and a negative supply voltage VSSprovided to each of the plurality of memory cells 10 may be unstablysupplied. Accordingly, the resistance of a path providing a word linevoltage and a path providing the negative supply voltage VSS is requiredto be reduced to improve the performance of the memory device 100.

Accordingly, the width of a word line pattern forming the path providingthe word line voltage may be increased to reduce the resistance of thepath in the memory device 100, according to an example embodiment. Inaddition, the cross-sectional area of a via forming the path providingthe negative supply voltage VSS may be increased to reduce theresistance of the path in the memory device 100, according to an exampleembodiment.

The negative supply voltage VSS may sensitively react to noise anddelay, and when the negative supply voltage VSS is provided to theplurality of memory cells 10 through different paths, the performancedeviation of the plurality of memory cells 10 may increase.

Accordingly, the memory device 100 according to an example embodimentmay stably provide the negative supply voltage VSS to the plurality ofmemory cells 10 through a mesh-shaped pattern formed on a plurality ofwiring layers.

FIG. 2 is a circuit diagram illustrating the memory cell 10 according toan embodiment. Referring to FIG. 2, the memory cell 10 may include sixtransistors (i.e., first to sixth transistors N1, N3, N5, N6, P2 andP4). The first, third, fifth, and sixth transistors N1, N3, N5, and N6may be n-channel field effect transistors (NFETs), and the second andfourth transistors P2 and P4 may be p-channel field effect transistors(PFETs). The memory cell 10 may be a six-transistor (6T)-SRAM cell, andmay include a pair of inverters (i.e., first and second inverters INV1and INV2) receiving the positive supply voltage VDD and the negativesupply voltage (or ground voltage) VSS.

The first inverter INV1 may include the first and second transistors N1and P2, and the second inverter INV2 may include the third and fourthtransistors N3 and P4. As shown in FIG. 2, the first inverter INV1 maybe cross-coupled to the second inverter INV2.

The fifth and sixth transistors N5 and N6 may be respectively connectedto a bit line BLt and a complementary bit line BLc (or bit line bar),and voltage levels of the bit line BLt and the complementary bit lineBLc may be provided to the first inverter INV1 and the second inverterINV2, respectively. Each of the fifth and sixth transistors N5 and N6may be referred to as a pass transistor.

Each of the gates of the fifth and sixth transistors N5 and N6 may beconnected to a word line WL. The fifth and sixth transistors N5 and N6may be switched by the word line WL, and may provide the voltage levelsof the bit line BLt and the complementary bit line BLc to the firstinverter INV1 and the second inverter INV2, respectively.

Herein, transistors may have various different structures. For example,the transistors may include fin field effect transistors (FinFETs)formed by an active pattern extending in a fin shape and a gateelectrode. The transistors may also include multi-bridge channel fieldeffect transistors (MBCFETs) formed by a plurality of nanosheetsextending in parallel to one another and a gate electrode. Thetransistors may include Forksheet FETs having a structure in whichnanosheets for a P-type transistor and nanosheets for an N-typetransistor are separated from each other by a dielectric wall, and thus,the N-type transistor and the P-type transistor are closer. Thetransistors may include vertical field effect transistors (VFETs)including source/drain regions apart from each other in a Z-axisdirection of FIG. 3 and a gate electrode surrounding a channel region.The transistors may include a field effect transistor (FET) such as acomplementary FET (CFET), a negative FET (NCFET), or a carbon nanotube(CNT) FET, and may also include a bipolar junction transistor or another3-dimensional (3D) transistor.

Paths through which a word line voltage, the positive supply voltageVDD, negative supply voltages VSS11 and VSS12, and a bit line voltageare provided to the memory cell 10 may be formed in limited wiringlayers. Because the driving characteristics for each voltage may bedifferent depending on the resistance of a path through which acorresponding voltage is provided, forming a path having a lowresistance may be important to improve the driving characteristics foreach voltage.

FIG. 3 is a cross-sectional view illustrating a wiring layer accordingto an example embodiment. Referring to FIG. 3, a plurality of layers(i.e., first to ninth layers 41 to 49) may be formed on a substrate 40.A memory cell 10 a, which is an example of the memory cell 10 of FIG. 2,may be formed on the substrate 40, and the memory cell 10 a may be a6T-SRAM cell described above with reference to FIG. 2. The plurality ofmemory cells 10 included in the memory cell array 130 described abovewith reference to FIG. 1 may be formed on the substrate 40. FIG. 3 isonly a cross-sectional view illustrating the first to ninth layers 41 to49 formed on the memory cell 10 a, and may be different from across-sectional view of an actual SRAM cell.

The first layer 41 may be referred to as a contact layer, and mayinclude a gate contact CB connected to a gate electrode of a transistorand a source/drain contact CA connected to a source/drain region of thetransistor. The first layer 41 may be referred to as M0, and may beformed in a middle-of-line (MOL) manufacturing operation, and the memorycell 10 a and the first layer 41 may be formed in a front-end-of-line(FEOL) manufacturing operation.

Herein, the second layer 42 may be referred to as a contact via layer,and may be referred to as V0. The third layer 43 may be referred to as afirst wiring layer M1. The fourth layer 44 may be referred to as a firstvia layer V1. The fifth layer 45 may be referred to as a second wiringlayer M2. The sixth layer 46 may be referred to as a second via layerV2. The seventh layer 47 may be referred to as a third wiring layer M3.The eighth layer 48 may be referred to as a third via layer V3. Theninth layer 49 may be referred to as a fourth wiring layer M4. Thesecond to ninth layers 42 to 49 may be formed in a back-end-of-line(BEOL) operation. In the drawings to be described below, only somelayers are shown for convenience of illustration, and a via may bedisplayed, even though the via is under a pattern of an upper wiringlayer, to indicate a connection between a pattern of the upper wiringlayer and a pattern of a lower wiring layer.

FIG. 4 is a plan view showing an arrangement of the memory cell array130 according to an example embodiment. FIG. 5 is a plan view showing alayout of the memory cell array 130 according to an example embodiment.

In particular, FIG. 4 is a plan view illustrating an arrangement of ninememory cells (i.e., first to ninth memory cells C1 to C9) included inthe memory cell array 130, and FIG. 5 is a plan view illustrating alayout corresponding to the first to ninth memory cells C1 to C9. InFIG. 5, reference characters written on patterns indicate a lineelectrically connected to a corresponding pattern and/or a voltageapplied to the corresponding pattern.

Referring to FIG. 5, each of the first to ninth memory cells C1 to C9included in the memory cell array 130 may have a layout mirror-symmetricwith respect to an adjacent memory in a row direction or a columndirection. For example, the layout of the first memory cell C1 and thelayout of the second memory cell C2 may be mirror-symmetric in thecolumn direction, that is, with respect to an axis parallel to a Y-axistherebetween. In addition, the layout of the fourth memory cell C4 andthe layout of the first memory cell C1 may be mirror-symmetric in a rowdirection, that is, with respect to an axis parallel to an X-axistherebetween. In addition, the layout of the fifth memory cell C5 may bemirror-symmetric with the layout of the fourth memory cell C4 in thecolumn direction and mirror-symmetric with the second memory cell C2 inthe row direction. Referring to FIG. 5, because the first to thirdmemory cells C1 to C3 may be arranged in the same row, the first tothird memory cells C1 to C3 may be commonly connected to a word lineWL[i]. Because the fourth to sixth memory cells C4 to C6 may be arrangedin the same row, the fourth to sixth memory cells C4 to C6 may becommonly connected to a word line WL[i+1]. Because the seventh to ninthmemory cells C7 to C9 may be arranged in the same row, the seventh toninth memory cells C7 to C9 may be commonly connected to a word lineWL[i+2]. For convenience of description, the same word line isillustrated as being separated in FIG. 5, the same word line may beconnected in one pattern.

Referring to FIG. 5, the first, fourth, and seventh memory cells C1, C4,and C7 may be arranged in the same column, and may be commonly connectedto the same bit line BLt[k], complementary bit line BLc[k], and positivepower supply line VDD[k]. The second, fifth, and eighth memory cells C2,C5, and C8 may be arranged in the same column, and may be connected tothe same bit line BLt[k+1], complementary bit line BLc[k+1], andpositive power supply line VDD[k+1]. The third, sixth, and ninth memorycells C3, C6, and C9 may be arranged in the same column, and may beconnected to the same bit line BLt[k+2], complementary bit lineBLc[k+2], positive power supply line VDD[k+2]. For convenience ofdescription, although the same bit line, complementary bit line, andpositive power supply line are illustrated as being separated, the samebit line, complementary bit line, and positive power supply line may beconnected in one pattern.

Each of the first to ninth memory cells C1 to C9 may be connected to aplurality of negative power supply lines. For example, referring to FIG.5, the first memory cell C1 may be connected to the first negative powersupply line VSS1 and the second negative power supply line VSS2 as shownin FIG. 2.

Each of the first to ninth memory cells C1 to C9 may include a pluralityof transistors formed in a plurality of active regions. For example, thefirst memory cell C1 may include a plurality of transistors formed infirst to fourth active regions RX1 to RX4. A transistor formed in anN-type active region may be referred to as an N-type transistor. Atransistor formed in a P-type active region may be referred to as aP-type transistor. Although not illustrated in FIG. 5, an active patternmay be formed in an active region. The active pattern may be in the formof a fin or a nanosheet.

FIGS. 6A and 6B are cross-sectional views showing examples of a cellhaving a finFET structure according to an example embodiment. In detail,FIG. 6A is a cross-sectional view showing an example of a cross-sectionof the first cell C1 taken along line Y-Y′ of FIG. 5, and FIG. 6B is across-sectional view showing an example of a cross-section of the firstcell C1 taken along X-X′ of FIG. 5. Although not shown in FIGS. 6A and6B, a gate spacer may be formed on a side surface of a gate electrode,and a gate dielectric film may be formed between the gate electrode andthe gate spacer and on a lower surface of the gate electrode. Also, abarrier film may be formed on a surface of a contact and/or a via.Hereinafter, FIGS. 6A and 6B will be described with reference to FIG. 5,and redundant descriptions of FIGS. 6A and 6B will be omitted.

Referring to FIG. 6A, a substrate 1000 may be bulk silicon or asilicon-on-insulator (SOI), and as an unlimited example, may includesilicon germanium (SiGe), silicon germanium on insulator (SGOI), indiumantimonide (InSb), lead tellurium (PbTe) compound, indium arsenide(InAs), phosphide, gallium arsenide (GaAs), gallium antimonide (GaSb),or the like. A first fin F1 may extend in an Y-axis direction on thesubstrate 1000, and first to third source/drain regions SD1 to SD3 maybe formed in the first fin F1. First to fourth interlayer insulatingfilms 31 to 34 may be formed on the first fin F1. The first and secondsource/drain regions SD1 and SD2 along with a first gate electrode G1may form a transistor, that is, a p-type field effect transistor (PFET),and the second and third source/drain regions SD2 and SD3 along with asecond gate electrode G2 may form another PFET.

First and second source/drain contacts CA1 and CA2 may be respectivelyconnected to the first and second source/drain regions SD1 and SD2 bypenetrating the second interlayer insulating film 32. According to someembodiments, at least one of the first and second source/drain contactsCA1 and CA2 may be formed as a lower source/drain contact penetratingthe first interlayer insulating film 31 and an upper source/draincontact penetrating the second interlayer insulating film 32. A firstsource/drain via VA1 may be connected to the first source/drain contactCA1 by penetrating the third interlayer insulating film 33, and may beconnected to a bit line pattern BLt formed on the first wiring layer M1.

Referring to FIG. 6B, a field insulating film 20 may be formed on thesubstrate 1000, and first to fourth fins F1 to F4 penetrating throughthe field insulating film 20 may cross first and second gate electrodesG1 and G2 extending in the X-axis direction. The field insulating film20 may include, as an unlimited example, silicon dioxide (SiO₂), siliconnitride (SiN), silicon oxynitride (SiON), silicon oxycarbide nitride(SiOCN), or a combination of two or more of SiO₂, SiN, SiON, and SiOCN.The first and second gate electrodes G1 and G2 may include, as anunlimited example, titanium (Ti), tantalum (Ta), tungsten (W), aluminum(Al), copper (Co), or a combination of two or more of Ti, Ta, W, Al, andCo, or may include silicon (Si) or SiGe, which is not a metal. Also, thefirst and second gate electrodes G1 and G2 may be formed by stacking twoor more conductive materials, and for example, may include a workfunction adjusting film including titanium nitride (TiN), tantalumnitride (TaN), titanium carbide (TiC), titanium carbide (TaC), titaniumaluminum carbide (TiAlC), or a combination of two or more of TiN, TaN,TiC, TaC, and TiAlC, and a filling conductive film including W, Al, orthe like. A device isolation film ISO may extend in the Y-axis directionbetween the first fin F1 and the second fin F2, the device isolationfilm ISO may extend in the Y-axis direction between the second fin F2and the third fin F3, and the device isolation film ISO may extend inthe Y-axis direction between the third fin F3 and the fourth fin F4. Aregion in which the first fin F1 is formed may be the first activeregion RX1, a region in which the second fin F2 is formed may be thesecond active region RX2, a region in which a third fin F3 is formed maybe the third active region RX3, and a region in which the fourth fin F4is formed may be the fourth active region RX4.

A gate contact CB may be connected to the second gate electrode G2 bypenetrating the second interlayer insulating film 32. In someembodiments, the gate contact CB may be formed as a lower gate contactpenetrating the first interlayer insulating film 31 and an upper gatecontact penetrating the second interlayer insulating film 32. A gate viaVB may be connected to the gate contact CB by penetrating the thirdinterlayer insulating film 33, and may be connected to a word linepattern WL[i] formed on the first wiring layer M1.

FIGS. 6C and 6D are cross-sectional views showing examples of a cellhaving a gate-all-around (GAA) transistor structure, according to anexample embodiment. In detail, FIG. 6C is a cross-sectional view showingan example of a cross-section of the first cell C1 taken along line Y-Y′of FIG. 5, and FIG. 6D is a cross-sectional view showing an example of across-section of the first cell C1 taken along line X-X′ of FIG. 5.FIGS. 6C and 6D may also be cross-sectional views of a cell having theGAA transistor structure in which a channel region is surrounded by agate electrode. For example, the cross-sectional views shown in FIGS. 6Cand 6D may be cross-sectional views of a cell including a multi-bridgechannel (MBC) transistor.

Unlike FIG. 6A, referring to FIG. 6C, a first fin-type active region FA1on the substrate 1000 may extend in the Y-axis direction, and mayinclude a nanowire structure NWS formed at a position apart from thefirst fin-type active region FA1 in a Z-axis direction. The nanowirestructure NWS may include nanowires extending in parallel to an uppersurface of the first fin-type active region FA1. The nanowires may besequentially stacked on the first fin-type active region FA1, and eachof the nanowires may have a channel region. The nanowires may includethe same material as the configuring component of the substrate 1000.However, the inventive concept is not limited thereto, a nanosheetstructure NSS instead of the nanowire structure NWS may be formed at aposition apart from the first fin-type active region FA1 in the Z-axisdirection.

The first to third source/drain regions SD1 to SD3 may be formed on thefirst fin-type active region FA1. Each of the first to thirdsource/drain regions SD1 to SD3 may be connected to the nanowirestructure NWS. Although not illustrated in FIG. 6C, an insulating linercovering side surfaces of the first and second gate electrodes G1 and G2may be formed on the nanowire structure NWS, and a spacer may be formedon the insulating liner.

Unlike FIG. 6B, referring to FIG. 6D, a plurality of fin-type activeregions FA1 to FA4 protruding from the substrate 1000 and extending inthe Y-axis direction may be included. A nanowire structure NWS may beformed at a position apart from each of the plurality of fin-type activeregions FA1 to FA4 in the Z-axis direction. The cross-section of ananowire is shown in a rectangular shape, but is not limited thereto,and may have various shapes.

FIG. 7 is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 7 is aplan view illustrating a contact via layer V0 and the first wiring layerM1 formed on the memory cell array 130 on an X-Y plane, but descriptionswith reference to FIG. 7 may be applied to any via layers and wiringlayers that are successively stacked. For convenience of description,active regions, active patterns, gate electrodes, contacts, or the likedescribed above with reference to FIGS. 5 to 6B may not be shown in planviews to be described below.

Referring to FIG. 7, a first bit line pattern M1_BLt and a firstcomplementary bit line pattern M1_BLc may be formed on the first wiringlayer M1. The first bit line pattern M1_BLt and the first complementarybit line pattern M1_BLc may extend in a Y-axis direction (e.g., firstdirection). A plurality of first bit line patterns M1_BLt and aplurality of first complementary bit line patterns M1_BLc may bearranged alternatively. A positive voltage pattern M1_VDD providing thepositive supply voltage VDD may be formed on the first wiring layer M1.A plurality of positive voltage patterns VDD may extend between firstbit line patterns M1_BLt and first complementary bit line patternsM1_BLc in the Y-axis direction, respectively. Referring to FIG. 7,landing pad regions M1_LP_RG of the first wiring layer M1 may extend inthe Y-axis direction, and each of the landing pad regions M1_LP_RG maybe adjacent to the first bit line patterns M1_BLt or the firstcomplementary bit line patterns M1_BLc.

Each of the landing pad regions M1_LP_RG of the first wiring layer M1may include a plurality of first negative supply voltage VSS landingpads M1_VSS_LP, and a plurality of first word line landing padsM1_WL_LP. The first negative supply voltage VSS landing pads M1_VSS_LPand the plurality of first word line landing pads M1_WL_LP included inthe landing pad region M1_LP_RG may be aligned in the Y-axis direction.A landing pad may connect a pattern of an upper layer to a pattern of alower layer.

For example, as shown in FIGS. 2 and 3, a first negative supply voltageVSS landing pad M1_VSS_LP may be connected to source terminals of thefirst transistor N1 and the third transistor N3 through source/draincontacts. Each of the first negative supply voltage VSS landing padsM1_VSS_LP may be formed on a boundary of a memory cell. In particular,each of the first negative supply voltage VSS landing pads M1_VSS_LP maybe formed on the corner or edge of the boundary of the memory cell. Thememory cell may be the SRAM cell shown in FIG. 2. The first negativesupply voltage VSS landing pads M1_VSS_LP may also be arranged tooverlap a first negative voltage pattern M2_VSS extending in an X-axisdirection (e.g., second direction) on the second wiring layer M2, aswill be described below with reference to FIG. 8B.

The first word line landing pads M1_WL_LP may be connected to gateterminals of the fifth transistor N5 and the sixth transistors N6through gate contacts, as shown in FIGS. 2 and 3. The first word linelanding pads M1_WL_LP may be formed on the boundary of a memory cell. Indetail, the first word line landing pads M1_WL_LP may be formed on theleft boundary or the right boundary of a memory cell. The memory cellmay be the SRAM cell shown in FIG. 2. The first word line landing padsM1_WL_LP may be arranged to overlap a first word line pattern M2_WLextending in the X-axis direction on the second wiring layer M2, as willbe described below with reference to FIG. 8B.

FIG. 8A is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 8A is aplan view illustrating a first via layer V1 and the second wiring layerM2 formed on the memory cell array 130 on an X-Y plane, and descriptionswith reference to FIG. 8A may be applied to any via layers and wiringlayers that are successively stacked.

Referring to FIG. 8A, a second negative voltage landing pad M2_VSS_LPand the first word line pattern M2_WL may be formed on the second wiringlayer M2. The first word line pattern M2_WL may extend in the X-axisdirection (e.g., second direction). The second negative voltage landingpad M2_VSS_LP may be arranged at the corner or edge of a cell boundary.The second negative voltage landing pad M2_VSS_LP may be connected tothe first negative supply voltage VSS landing pad M1_VSS_LP formed onthe first wiring layer M1 through a via formed on the first via layerV1. One second negative voltage landing pad M2_VSS_LP may be connectedto one via in a Z-direction (e.g., third direction). Accordingly, thesecond negative voltage landing pad M2_VSS_LP may transmit the negativesupply voltage VSS transmitted from an upper wiring layer to a lowerwiring layer.

A cut region CR may be formed between a plurality of second negativevoltage landing pads M2_VSS_LP adjacent to each other in the X-axisdirection. The cut region CR may be a region in which a pattern of thewiring layer M2 is not formed.

FIG. 8B is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 8B is aplan view illustrating the first via layer V1 and the second wiringlayer M2 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 8B may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 8B, the first negative voltage pattern M2_VSS and thefirst word line pattern M2_WL may be formed on the second wiring layerM2. Each of the first negative voltage pattern M2_VSS and the first wordline pattern M2_WL may extend in the X-axis direction (e.g., seconddirection). A plurality of first negative voltage patterns M2_VSS and aplurality of first word line patterns M2_WL may be alternately arrangedin the Y-axis direction (e.g., first direction) to be parallel to eachother.

Referring to FIG. 8B, the plurality of first negative voltage patternsM2_VSS may be connected to the plurality of first negative supplyvoltage VSS landing pads M1_VSS_LP formed on the first wiring layer M1through vias formed in the first via layer V1. In detail, the pluralityof first negative voltage patterns M2_VSS may connect the plurality offirst negative supply voltage VSS landing pads M1_VSS_LP arranged on thefirst wiring layer M1 in the X-axis direction to one another. The firstnegative voltage patterns M2_VSS may connect the plurality of firstnegative supply voltage VSS landing pads M1_VSS_LP to one another,wherein the plurality of first negative supply voltage VSS landing padsM1_VSS_LP are formed on edge boundaries of at least two memory cellsadjacent to each other in the X-axis direction. However, the inventiveconcept is not limited thereto, and the first negative voltage patternsM2_VSS may also connect the plurality of first negative supply voltageVSS landing pads M1_VSS_LP to one another, wherein the plurality offirst negative supply voltage VSS landing pads M1_VSS_LP are formed onedge boundaries of at least three adjacent memory cells.

The first negative voltage pattern M2_VSS may connect a preset number offirst negative supply voltage VSS landing pads to one another. Forexample, referring to FIG. 8B, the first negative voltage pattern M2_VSSmay connect two first negative supply voltage VSS landing pads to eachother, but embodiments are not limited thereto.

The first negative voltage pattern M2_VSS may connect a certain numberof first negative supply voltage VSS landing pads to one another and beterminated. For example, referring to FIG. 8B, the first negativevoltage pattern M2_VSS may connect two first negative supply voltage VSSlanding pads to each other and be terminated.

The memory cell array 130 may include a first cut region. The first cutregion may be a region in which the first negative voltage patternM2_VSS is not formed. That is, the first cut region may be formedbetween two first negative voltage patterns M2_VSS adjacent to eachother in the X-axis direction. The first cut region may extend in theX-axis direction, and may be terminated at a point in contact with thefirst negative voltage pattern M2_VSS.

As the first negative voltage pattern M2_VSS becomes longer, a couplingcapacitance with the first word line pattern M2_WL may increase. Whenthe coupling capacitance increases, an RC delay increases, and thus, theword line driving characteristics may decrease.

The memory cell array 130 according to an example embodiment may reducethe length of the first negative voltage pattern M2_VSS by including thefirst cut region, and thus, the word line driving characteristics may beimproved.

Meanwhile, as the first negative voltage pattern M2_VSS according to anexample embodiment is connected to at least two first negative supplyvoltage VSS landing pads M1_VSS_LP, resistance of a power supply lineproviding a negative supply voltage may be reduced. Accordingly, drivingcharacteristics of a power supply line providing a negative supplyvoltage may be improved.

Referring to FIG. 8B, the first word line pattern M2_WL may be connectedto a plurality of first word line landing pads M1_WL_LP formed on thefirst wiring layer M1 through vias formed in the first via layer V1.Referring to FIG. 8B, in the first via layer V1, vias corresponding toeach of the plurality of first word line landing pads M1_WL_LP are shownto be formed, but vias corresponding to some word line landing pads maynot be formed.

FIG. 9 is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 9 is aplan view illustrating the second via layer V2 and a third wiring layerM3 formed on the memory cell array 130 on an X-Y plane, and descriptionswith reference to FIG. 9 may be applied to any via layer and wiringlayer that are successively stacked.

Referring to FIG. 9 a plurality of second negative voltage patternM3_VSS and a plurality of second word line landing pads M3_WL_LP may beformed on the third wiring layer M3. The plurality of second negativevoltage pattern M3_VSS and the plurality of second word line landingpads M3_WL_LP may extend in the Y-axis direction (e.g., firstdirection). The second negative voltage pattern M3_VSS may be formed onthe boundary of a memory cell. The plurality of second negative voltagepatterns M3_VSS and the plurality of second word line landing padsM3_WL_LP may be alternately arranged to be parallel to one another inthe X-axis direction.

Each of the plurality of second word line landing pads M3_WL_LP mayconnect the first word line pattern M2_WL formed on the second wiringlayer M2 to a second word line pattern M4_WL formed on a fourth wiringlayer M4 to be described later.

Referring to FIG. 9, the second negative voltage pattern M3_VSS may beconnected to the first negative voltage pattern M2_VSS formed on thesecond wiring layer M2 through vias formed in the second via layer V2.As the first negative voltage pattern M2_VSS is connected to the secondnegative voltage pattern M3_VSS, a mesh pattern providing the negativesupply voltage VSS may be formed. That is, the first negative voltagepattern M2_VSS extending in the X-axis direction connects the pluralityof first negative supply voltage VSS landing pads M1_VSS_LP of adjacentmemory cells to one another, and the second negative voltage patternM3_VSS extending in the Y-axis direction is connected to the firstnegative voltage pattern M2_VSS, and thus a mesh pattern may be formed.

An integrated circuit according to an example embodiment may commonlyprovide negative supply voltages VSS to a plurality of memory cellsincluded in the memory cell array 130 through a mesh pattern formedthrough the second wiring layer M2 and the third wiring layer M3, andthus a stable negative supply voltage VSS may be provided even when thedegree of integration of the integrated circuit increases.

FIG. 10 is a plan view illustrating a wiring layer of the memory cell130 array according to an example embodiment. In detail, FIG. 10 is aplan view illustrating the third via layer V3 and the fourth wiringlayer M4 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 10 may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 10, a second word line pattern M4_WL may be formed onthe fourth wiring layer M4. Each of a plurality of second word linepatterns M4_WL may extend in the X-axis direction (e.g., seconddirection). The plurality of second word line patterns M4_WL may bearranged to be parallel to one another.

Referring to FIG. 10, the second word line pattern M4_WL may beconnected to the first word line pattern M2_WL formed on the secondwiring layer M2 through a via formed in the third via layer V3.

Referring to FIG. 10, the fourth wiring layer M4 may be dedicated to thesecond word line pattern M4_WL. That is, other patterns than the secondword line pattern M4_WL may not be formed on the fourth wiring layer M4,and the plurality of second word line patterns M4_WL may be arranged inthe Y-axis direction to be parallel to one another. As the fourth wiringlayer M4 is dedicated to the second word line pattern M4_WL, the widthof the second word line pattern M4_WL may be increased. Accordingly,because the resistance caused by the second word line pattern M4_WL maybe reduced, word line driving characteristics of a word line may beimproved.

FIG. 11A is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 11A is aplan view illustrating the second via layer V2 and the third wiringlayer M3 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 11A may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 11A, unlike a case where the second negative voltagepattern M3_VSS in a line shape is formed on the third wiring layer inFIG. 9, a mesh-shaped second negative voltage pattern M3_VSS Mesh may beformed on the third wiring layer M3. That is, unlike a case where thesecond negative voltage pattern M3_VSS has a line shape extending in theY-axis direction in FIG. 9, the mesh-shaped second negative voltagepattern M3_VSS Mesh of FIG. 11A may have a shape in which linesextending in the X-axis direction and the Y-axis direction areconnected. Accordingly, because the area of a path for providing thenegative supply voltage VSS in the third wiring layer M3 is increased,the resistance may be reduced, and the driving characteristics of thenegative supply voltage VSS may be improved.

The mesh-shaped second negative voltage pattern M3_VSS Mesh formed onthe third wiring layer M3 shown in FIG. 11A may be formed above thesecond wiring layer M2 shown in FIG. 8A. Accordingly, the mesh-shapedsecond negative voltage pattern M3_VSS Mesh may be connected to thesecond negative voltage landing pad M2_VSS_LP formed on the secondwiring layer M2 through vias formed in the second via layer V2. That is,vias of the second via layer V2 may be formed on the second negativevoltage landing pad M2_VSS_LP.

FIG. 11B is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 11B is aplan view illustrating the second via layer V2 and the third wiringlayer M3 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 11B may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 11B, unlike FIG. 11A, the meshed-shaped secondnegative voltage pattern M3_VSS Mesh formed on the third wiring layer M3shown in FIG. 11B may be formed above the second wiring layer M2 shownin FIG. 8B. Accordingly, the meshed-shaped second negative voltagepattern M3_VSS Mesh may be connected to the first negative voltagepattern M2_VSS formed on the second wiring layer M2 through vias formedin the second via layer V2. That is, vias of the second via layer V2 maybe formed on the first negative voltage pattern M2_VSS. Because thefirst negative voltage pattern M2_VSS may be arranged in a greaterregion than that of the second negative voltage landing pad M2_VSS_LP,the number of vias of the second via layer V2 may increase. As thenumber of vias of the second via layer V2 increases, the resistance of apattern for providing the negative supply voltage VSS may decrease, andas the resistance decreases, the driving characteristics of the negativesupply voltage VSS may be improved.

FIG. 12 is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 12 is aplan view illustrating the first via layer V1 and the second wiringlayer M2 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 12 may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 12, the first negative voltage pattern M2_VSS and thefirst word line pattern M2_WL may be formed on the second wiring layerM2. Each of the first negative voltage pattern M2_VSS and the first wordline pattern M2_WL may extend in the X-axis direction (e.g., seconddirection). A plurality of first negative voltage patterns M2_VSS and aplurality of first word line patterns M2_WL may be alternately arrangedin the Y-axis direction (e.g., first direction) to be parallel to eachother.

Referring to FIG. 12, the plurality of first negative voltage patternsM2_VSS may be connected to the plurality of first negative voltagelanding pads M1_VSS_LP formed on the first wiring layer M1 through viasformed in the first via layer V1. In addition, the plurality of firstword line patterns M2_WL may be connected to a plurality of first wordline landing pads M1_WL_LP (for example, described in FIG. 7) formed onthe first wiring layer M1 through vias formed in the first via layer V1.

According to an example embodiment, a width W2 of a via connected to thefirst negative voltage pattern M2_VSS may be greater than a width W1 ofa via connected to the first word line pattern M2_WL. Alternatively, thecross-sectional area of the via connected to the first negative voltagepattern M2_VSS may be greater than the cross-sectional area of the viaconnected to the first word line pattern M2_WL. As the cross-sectionalarea of the via connected to the first negative voltage pattern M2_VSSincreases, the resistance of a path through which the negative supplyvoltage VSS is transmitted to a memory cell may be reduced, and thedriving characteristics of the negative supply voltage VSS may beimproved.

FIG. 13 is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 13 is aplan view illustrating the second via layer V2 and the third wiringlayer M3 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 13 may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 13, as in FIG. 9, the second negative voltage patternM3_VSS and the second word line landing pad M3_WL_LP may be formed onthe third wiring layer M3. The second negative voltage pattern M3_VSSand the plurality of second word line landing pads M3_WL_LP may extendin the Y-axis direction (e.g., first direction). The second negativevoltage pattern M3_VSS may be formed on the boundary of a memory cell.The plurality of second negative voltage patterns M3_VSS and theplurality of second word line landing pads M3_WL_LP may be alternatelyarranged to be parallel to one another in the X-axis direction.

Referring to FIG. 13, the second negative voltage pattern M3_VSS may beconnected to the first negative voltage pattern M2_VSS formed on thesecond wiring layer M2 through vias formed in the second via layer V2.In addition, the second word line landing pad M3_WL_LP may be connectedto the first word line pattern M2_WL formed on the second wiring layerM2 through a via formed in the first via layer V1.

According to an example embodiment, a width W4 of a via connected to thesecond negative voltage pattern M3_VSS may be greater than a width W3 ofa via connected to the second word line landing pad M3_WL_LP.Alternatively, the cross-sectional area of the via connected to thesecond negative voltage pattern M3_VSS may be greater than thecross-sectional area of the via connected to the second word linelanding pattern M2_WL. As the cross-sectional area of the via connectedto the second negative voltage pattern M3_VSS increases, the resistanceof a path through which the negative supply voltage VSS is transmittedto a memory cell may be reduced, and the driving characteristics of thenegative supply voltage VSS may be improved.

FIG. 14A is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 14A is aplan view illustrating the first via layer V1 and the second wiringlayer M2 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 14A may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 14A, unlike FIG. 8B, a bit line landing pad M2_BL_LPmay be formed on the second wiring layer M2. The bit line landing padM2_BL_LP may be arranged in the cut region CR of FIG. 8B. The bit linelanding pad M2_BL_LP may be connected to the first bit line patternM1_BLt and the first complementary bit line pattern M1_BLc formed on thefirst wiring layer M1 through a via formed in the first via layer V1.

The bit line landing pad M2_BL_LP may be connected to a second bit linepattern M3_BLt and a second complementary bit line pattern M3_BLc, whichwill be described below with reference to FIG. 14B. Because theresistance of a path providing a voltage to a bit line through the bitline landing pad M2_BL_LP may be reduced, the driving characteristics ofthe bit line may be improved.

FIG. 14B is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 14B is aplan view illustrating the second via layer V2 and the third wiringlayer M3 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 14B may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 14B, unlike FIG. 9, the second bit line pattern M3_BLtand the second complementary bit line pattern M3_BLc may be formed onthe third wiring layer M3. The second bit line pattern M3_BLt may bearranged to overlap the first bit line pattern M1_BLt formed on thefirst wiring layer M1, and the second complementary bit line patternM3_BLc may be arranged to overlap the first complementary bit linepattern M1_BLc formed on the first wiring layer M1.

Referring to FIGS. 14A and 14B, the second bit line pattern M3_BLt andthe second complementary bit line pattern M3_BLc may be connected to thebit line landing pad M2_BL_LP formed on the second wiring layer M2through vias formed in the second via layer V2.

Because the resistance of a path providing a voltage to a bit line maybe reduced by forming the second bit line pattern M3_BLt and the secondcomplementary bit line pattern M3_BLc on the third wiring layer M3, thedriving characteristics of the bit line may be improved.

FIG. 15 is a plan view illustrating a wiring layer of the memory cellarray 130 according to an example embodiment. In detail, FIG. 15 is aplan view illustrating the first via layer V1 and the second wiringlayer M2 formed on the memory cell array 130 on an X-Y plane, anddescriptions with reference to FIG. 15 may be applied to any via layerand wiring layer that are successively stacked.

Referring to FIG. 15, as in FIG. 8B, the first negative voltage patternM2_VSS and the first word line pattern M2_WL may be formed on the secondwiring layer M2. However, unlike FIG. 8B, the first word line patternM2_WL may have a jog pattern. In detail, the width of the first wordline pattern M2_WL may be extended to a space occupied by the cut regionCR of FIG. 8B. That is, a width of a portion of the first word linepattern M2_WL, the portion not being adjacent to the first negativevoltage pattern M2_VSS, may be greater than a width of another portionof the first word line pattern M2_WL, the other portion being adjacentto the first negative voltage pattern M2_VSS. Accordingly, because thearea of the first word line pattern M2_WL is increased, the resistanceof a path through which a voltage is supplied to a word line may bereduced, and the driving characteristics of the word line may beimproved.

FIG. 16 is a flowchart of a method of manufacturing an integratedcircuit, according to an example embodiment. In some embodiments, atleast some of operations S200, S400, S600, and S800 shown in FIG. 16 maybe performed in a computing system (e.g., 300 of FIG. 20).

In operation S200, a logic synthesis of generating netlist data D13 fromregister-transfer level (RTL) data D11 by referring to a standard celllibrary D12 may be performed. The RTL data D11 may define a function ofan integrated circuit, and as non-limiting examples, may be written as aHardware Description Language (HDL) such as a VHSIC Hardware DescriptionLanguage (VHDL) and Verilog. The standard cell library D12 may definefunctions and properties of standard cells. A semiconductor design tool(e.g., a logic synthesis tool) may perform logic synthesis from the RTLdata D11 by referring to the standard cell library D12, and thusgenerate the netlist data D13 including a bitstream and/or a netlistdefining an integrated circuit, that is, defining a plurality ofstandard cells and a connection relationship of the standard cells.

In operation S400, place and routing (P&R) of generating layout data D15from the netlist data D13 by referring to the standard cell library D12and a design rule D14 may be performed. The standard cell library D12may define the layout of the standard cells, and the design rule D14 maydefine rules to be followed by the layout of an integrated circuitaccording to a semiconductor operation (e.g., operation S800). Forexample, the design rule D14 may define a minimum interval betweenpatterns in a wiring layer, a width of a pattern in the wiring layer, awidth of a via in a via layer, or the like.

The semiconductor design tool (e.g., a P&R tool) may arrange theplurality of standard cells by referring to the standard cell libraryD12 from the netlist data D13, and may route input pins, output pins,and power taps of the plurality of standard cells arranged by referringto the design rule D14.

The semiconductor design tool may generate wiring layers and via layersto improve driving characteristics. In some embodiments, as describedabove with reference to FIG. 8B, vias of the first via layer V1connected to adjacent memory cells are connected to each other throughthe first negative voltage pattern M2_VSS formed on the second wiringlayer M2, thereby improving driving characteristics for a negativesupply voltage. As described above with reference to FIG. 9, thenegative supply voltage VSS may be stably supplied throughout the memorycell array 130 through a mesh-shaped structure by connecting the firstnegative voltage pattern M2_VSS to the second negative voltage patternM3_VSS. In some embodiments, as described above with reference to FIG.10, driving characteristics for a word line may be improved by onlyarranging the plurality of second word line patterns M4_WL on the fourthwiring layer M4. In some embodiments, as described above with referenceto FIGS. 11A and 11B, driving characteristics for a negative supplyvoltage may be improved by forming the mesh-shaped second negativevoltage pattern M3_VSS MESH on the third wiring layer M3. In someembodiments, as described above with reference to FIGS. 12 and 13,driving characteristics for a negative supply voltage may be improved byexpanding a width of vias on a path providing the negative supplyvoltage VSS. In some embodiments, as described above with reference toFIGS. 14A and 14B, driving characteristics of a bit line may be improvedby arranging the bit line landing pad M2_BL_LP on the second wiringlayer M2 and arranging the plurality of second bit line patternsM3_BLt_1 and M3_BLc 1 on the third wiring layer M3. In some embodiments,as described above with reference to FIG. 15, driving characteristics ofa word line may be improved by expanding a width of the second word linepattern M2_WL to a cut region for the first negative voltage patternM2_VSS.

In operation S600, an operation of manufacturing a mask may beperformed. For example, as optical proximity correction (OPC) is appliedto the layout data D15, patterns formed on a mask may be defined to formpatterns formed on a plurality of layers, and at least one mask (or aphotomask) for forming patterns of each of the plurality of layers maybe manufactured.

In operation S800, an operation of fabricating the integrated circuitmay be performed. For example, the integrated circuit may be fabricatedby patterning the plurality of layers by using the at least one maskmanufactured in operation S600. As shown in FIG. 16, operation S800 mayinclude operations S820 and S840.

In operation S820, a front-end-of-line (FEOL) operation may beperformed. The FEOL operation may refer to an operation of formingindividual devices, for example, a transistor, a capacitor, a resistor,or the like, on a substrate during the fabrication of the integratedcircuit. For example, the FEOL operation may include planarizing andcleaning a wafer, forming a trench, forming a well, forming a gate line,and forming a source and a drain. Accordingly, devices included in theplurality of standard cells may be formed.

In operation S840, a back-end-of-line (BEOL) operation may be performed.The BEOL operation may refer to an operation of interconnecting theindividual devices, for example, the transistor, the capacitor, theresistor, and the like, during the fabrication of the integratedcircuit. For example, the BEOL operation may include performingsilicidation on gate, source, and drain regions, adding a dielectricmaterial, planarizing, forming a hole, adding a metal layer, forming avia, and forming a passivation layer. The wiring layers and via layersdescribed above with reference to FIGS. 3 to 15 may be formed in theBEOL operation S840. Next, the integrated circuit may be packaged in asemiconductor package and used as a component of various applications.

FIG. 17 is a flowchart showing an example of operation S400 of FIG. 16,according to an example embodiment. As described above with reference toFIG. 16, in operation S400′ of FIG. 17, arrangement and routing may beperformed by referring to the standard cell library D12 and the designrule D14. As shown in FIG. 17, operation S400′ may include a pluralityof operations S420, S440, S460, and S480. Hereinafter, descriptions ofFIG. 17 will be made with reference to FIG. 16. The plurality ofoperations S420, S440, S460, and S480 may be operations of generatingpaths for providing a word line voltage, supply voltages VDD and VSS,and a bit line voltage to the plurality of standard cells after theplurality of standard cells are arranged.

In operation S420, conductive patterns and vias forming a path providinga word line voltage may be generated. For example, the first word linelanding pad M1_WL_LP1 formed on the first wiring layer M1 describedabove with reference to FIG. 7, the first word line pattern M2_WL formedon the second wiring layer M2 described above with reference to FIGS. 8Aand 8B, the second word line landing pattern M3_WL_LP formed on thethird wiring layer M3 described above with reference to FIG. 9, and thesecond word line pattern M4_WL formed on the fourth wiring layer M4described above with reference to FIG. 10 may be generated. Vias of thefirst to third via layers V1, V2, and V3 described above through FIGS. 2to 15 may also be generated.

In operation S440, patterns and vias forming a path providing thenegative supply voltage VSS may be generated. For example, the firstnegative voltage landing pad M1_VSS_LP formed on the first wiring layerM1 described above with reference to FIG. 7, the second negative voltagelanding pad M2_VSS_LP formed on the second wiring layer M2 describedwith reference to FIG. 8A, the first negative voltage pattern M2_VSSformed on the second wiring layer M2 described above with reference toFIG. 8B, the second negative voltage pattern M3_VSS formed on the thirdwiring layer M3 described above with reference to FIG. 9, and themeshed-shaped second negative voltage pattern M3_VSS Mesh describedabove with reference to FIGS. 11A and 11B may be generated. Vias of thefirst to third via layers V1, V2, and V3 described above through FIGS. 2to 15 may also be generated.

In operation of S460, patterns and vias forming a path providing a bitline voltage may be generated. For example, the first bit line patternM1_BLt and the first complementary bit line pattern M1_BLc formed on thefirst wiring layer M1 described above with reference to FIG. 7, the bitline landing pad M2_BL_LP formed on the second wiring layer M2 describedabove with reference to FIG. 14A, and the second bit line pattern M3_BLtand the second complementary bit line pattern M3_BLc formed on the thirdwiring layer M3 described above with reference to FIG. 14B may begenerated. Vias of the first to third via layers V1, V2, and V3described above through FIGS. 2 to 15 may also be generated.

In operation S480, an operation of generating layout data may beperformed. As described above with reference to FIG. 16, the layout dataD15 may define the layout of an integrated circuit, may have a formatsuch as GDSII, and may include geometric information of the plurality ofstandard cells and interconnections thereof.

FIG. 18 is a flowchart showing an example of operation S440 of FIG. 17,according to an example embodiment.

Referring to FIG. 18, a path for providing a negative supply voltage maybe generated through a plurality of operations S441 to S443.

In operation S441, a plurality of first power supply line landing padsmay be generated on a first wiring layer. As described above withreference to FIG. 10, each of the plurality of first power supply linelanding pads may be arranged at a corner of a boundary of a memory cell.

In operation S442, a first negative power supply pattern connecting theplurality of first power supply line landing pads adjacent to each otherin an X-axis direction to each other may be generated on a second wiringlayer. Through the first negative power supply pattern, adjacent SRAMcells may receive the negative supply voltage VSS through a common path.Accordingly, the SRAM cells may stable receive the negative supplyvoltage VSS.

In operation S443, a second negative power supply pattern connected tothe first negative power supply patterns may be generated on a thirdwiring layer. In some embodiments, as described above with reference toFIG. 9, the second negative power supply pattern may have a line shapeextending in a Y-axis direction. In some embodiments, as described abovewith reference to FIGS. 11A and 11B, the second negative power supplypattern may have a mesh shape. A mesh-shaped path providing the negativesupply voltage VSS may be formed by connecting the second negative powersupply pattern to the first negative power supply pattern. Accordingly,the SRAM cells may stable receive the negative supply voltage VSS.

FIG. 19 is a block diagram of a system-on-chip (SoC) 200 according to anexample embodiment. The SoC 200 is a semiconductor device, and mayinclude an integrated circuit including patterns and vias for improvingdriving characteristics according to an example embodiment. The SoC 200is obtained by implementing complex functional blocks, such asintellectual property (IP) performing various functions on one chip. Amemory cell according to an example embodiment, for example, an SRAMcell, may be included in each functional block of the SoC 200 andaccordingly, the SoC 200 having improved driving characteristics for aword line voltage, a bit line voltage, and a power supply voltage, orthe like may be achieved.

Referring to FIG. 19, the SoC 200 may include a modem 220, a displaycontroller 230, a memory 240, an external memory controller 250, acentral processing unit (CPU) 260, a transaction unit 270, a powermanagement integrated circuit (PMIC) 280, and a graphics processing unit(GPU) 290, and the functional blocks of the SoC 200 may communicate witheach other through a system bus 210.

The CPU 260, which may control the overall operation of the SoC 200, maycontrol operations of other functional blocks of the SoC 200. The modem220 may demodulate a signal received from outside the SoC 200 or maydemodulate a signal generated inside the SoC 200 and transmit the signalto the outside. The external memory controller 250 may control anoperation of transmitting or receiving data to or from an externalmemory device connected to the SoC 200. For example, a program and/ordata stored in the external memory device may be provided to the CPU 260or the GPU 290 under control by the external memory controller 250. TheGPU 290 may execute program instructions related to graphics processing.The GPU 290 may receive graphics data via the external memory controller250 or transmit graphics data processed by the GPU 290 to the outsidethe SoC 200 via the external memory controller 250. The transaction unit270 may monitor data transaction of the functional blocks, and the PMIC280 may control power supplied to each functional block under control bythe transaction unit 270. The display controller 230 may transmit datagenerated in the SoC 200 to a display outside the SoC 200 by controllingthe display (or display apparatus).

The memory 240 may include a non-volatile memory such as electricallyerasable programmable read-only memory (EEPROM), flash memory, phasechange random access memory (PRAM), resistance random access memory(RRAM), nano floating gate memory (NFGM), polymer random access memory(PoRAM), magnetic random access memory (MRAM), or ferroelectric randomaccess memory (FRAM), and may include a volatile memory such as dynamicrandom access memory (DRAM), static random access memory (SRAM), mobileDRAM, double data rate synchronous dynamic random access memory (DDRSDRAM), low power DDR (LPDDR) SDRAM, graphic DDR (GDDR) SDRAM, or Rambusdynamic random access memory (RDRAM).

FIG. 20 is a block diagram of a computing system 300 including a memorystoring a program, according to an example embodiment. According to anexample embodiment, at least some of operations included in a method ofmanufacturing an integrated circuit (e.g., the method shown in FIG. 16)may be performed in the computing system 300.

The computing system 300 may be a fixed computing system such as adesktop computer, a workstation, or a server, or may be a portablecomputing system such as a laptop computer. As shown in FIG. 20, thecomputing system 300 may include a processor 310, input/output (I/O)devices 320, a network interface 330, random access memory (RAM) 340,read only memory (ROM) 350, and a storage 360. The processor 310, theI/O devices 320, the network interface 330, the RAM 340, the ROM 350,and the storage 360 may be connected to a bus 370 and communicate witheach other through the bus 370.

The processor 310 may be referred to as a processing unit, and mayinclude at least one core capable of executing an arbitrary instructionset (for example, Intel architecture-32 (IA-32), 64-bit extended IA-32,x86-64, PowerPC, Sparc, MIPS, ARM, or IA-64), such as a microprocessor,an application processor (AP), a digital signal processor (DSP), or aGPU. For example, the processor 310 may access a memory, i.e., the RAM340 or ROM 350, via the bus 370, and execute instructions stored in theRAM 340 or ROM 350.

The RAM 340 may store a program 341 or at least a portion thereof formanufacturing an integrated circuit according to an example embodiment,and the program 341 may cause the processor 310 to perform at least someof operations included in a method of manufacturing an integratedcircuit. That is, the program 341 may include a plurality ofinstructions executable by the processor 310, and the plurality ofinstructions included in the program 341 may cause the processor 310 toperform, for example, a logic synthesis operation of operation S200and/or an arrangement and routing operation of operation of operationS400 of FIG. 16.

The storage 360 may not lose stored data even when power supplied to thecomputing system 300 is cut off. For example, the storage 360 mayinclude a non-volatile memory device or may include a storage mediumsuch as a magnetic tape, an optical disk, or a magnetic disk. Also, thestorage 360 may be detached from the computing system 300. In someembodiments, the storage device 360 may store the program 341 accordingto an example embodiment, and the program 341 or at least a portionthereof may be loaded into the RAM 340 from the storage device 360before the program 341 is executed by the processor 310. In someembodiments, the storage 360 may store a file prepared in a programlanguage, and the program 341 generated by a compiler or the like or atleast a portion of the program 341 may be loaded to the RAM 340 from thefile. Also, as shown in FIG. 20, the storage 360 may store a database361, and the database 361 may include information required to design anintegrated circuit, for example, the standard cell library D12, thedesign rule D14, or the like of FIG. 16.

The storage 360 may store data processed or to be processed by theprocessor 310. In other words, according to the program 341, theprocessor 310 may generate data by processing data stored in the storage360 or may store generated data in the storage 360. For example, thestorage 360 may store the RTL data D11, the netlist data D13, and/or thelayout data D15 of FIG. 16.

The I/O devices 320 may include an input device such as a keyboard, apointing device, or the like, and may include an output device such as adisplay device, a printer, or the like. For example, via the I/O devices320, a user may trigger execution of the program 341 by the processor310, input the RTL data D11 and/or the netlist data D13 of FIG. 16, oridentify the layout data D15 of FIG. 16.

The network interface 330 may provide an access to a network outside thecomputing system 300. For example, the network may include a pluralityof computing systems and communication links, and the communicationlinks may include wired links, optical links, wireless links, or othertypes of links.

While the inventive concept has been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

1. An integrated circuit comprising a plurality memory cells, theintegrated circuit comprising: a first wiring layer comprising: a firstbit line pattern and a positive power supply pattern extending in afirst direction, the positive power supply pattern being configured toprovide a positive supply voltage; and a plurality of first power supplyline landing pads configured to provide a negative supply voltage, and aplurality of first word line landing pads configured to provide a wordline voltage; a second wiring layer comprising: a first negative powersupply pattern extending in a second direction, and connecting firstpower supply line landing pads, which are adjacent to each other in thesecond direction among the plurality of first power supply line landingpads, to each other, and configured to provide the negative supplyvoltage; and a plurality of first word line patterns extending in thesecond direction, connected to the plurality of first word line landingpads, and configured to provide the word line voltage; a third wiringlayer comprising: a second negative power supply pattern connected tothe first negative power supply pattern; and a plurality of second wordline landing pads connected to the plurality of first word linepatterns; and a fourth wiring layer comprising: a plurality of secondword line patterns extending in the second direction, connected to theplurality of second word line landing pads, and configured to providethe word line voltage.
 2. The integrated circuit of claim 1, wherein thesecond negative power supply pattern on the third wiring layer extendsin the first direction.
 3. The integrated circuit of claim 1, whereinthe second negative power supply pattern is formed in a mesh pattern onthe third wiring layer.
 4. The integrated circuit of claim 1, furthercomprising a first via layer which comprises: at least one first viaextending in a third direction, and connecting at least one of the firstpower supply line landing pads, which are adjacent to each other in thesecond direction among the plurality of first power supply line landingpads, to the first negative power supply pattern; and at least onesecond via extending in the third direction and connecting the pluralityof first word line landing pads to the plurality of first word linepatterns.
 5. The integrated circuit of claim 4, wherein across-sectional area of the first via is greater than a cross-sectionalarea of the second via.
 6. (canceled)
 7. The integrated circuit of claim4, further comprising a second via layer which comprises: at least onethird via extending in the third direction, and connecting the firstnegative power supply pattern to the second negative power supplypattern; and a fourth via extending in the third direction, andconnecting at least one of the plurality of first word line patterns toat least one the plurality of second word line landing pads.
 8. Theintegrated circuit of claim 7, wherein a cross-sectional area of thethird via is greater than a cross-sectional area of the fourth via. 9.The integrated circuit of claim 1, wherein a width of a portion of atleast one of the plurality of first word line patterns, the portionbeing adjacent to the first negative power supply pattern, is less thana width of another portion of the at least one of the plurality of firstword line patterns, the other portion not being adjacent to the firstnegative power supply pattern.
 10. The integrated circuit of claim 1,wherein the second wiring layer further comprises a bit line landing padformed on the second wiring layer, and connected to the first bit linepattern.
 11. The integrated circuit of claim 10, wherein the thirdwiring layer further comprises a second bit line pattern formed on thethird wiring layer, connected to the bit line landing pad, and extendingin the first direction.
 12. The integrated circuit of claim 1, whereinthe plurality of second word line patterns are arranged to be adjacentto each other on the fourth wiring layer.
 13. The integrated circuit ofclaim 1, wherein the memory cells comprise a static random access memory(SRAM) cell in a six-transistors (6T) structure.
 14. An integratedcircuit comprising a plurality memory cells, the integrated circuitcomprising: a bit line structure comprising: a first bit line patternformed on a first wiring layer, configured to provide a bit line voltageto the memory cells, and extending in a first direction; a word linestructure comprising: a plurality of first word line landing pads formedon the first wiring layer, and configured to provide a word line voltageto the memory cells; a plurality of first word line patterns formed on asecond wiring layer, extending in a second direction perpendicular tothe first direction, and connected to the plurality of first word linelanding pads; a plurality of second word line landing pads formed on athird wiring layer and connected to the plurality of first word linepatterns; and a plurality of second word line patterns formed on afourth wiring layer, extending in the second direction, and connected tothe plurality of second word line landing pads; and a negative powersupply line structure comprising: a plurality of first power supply linelanding pads formed on the first wiring layer, and configured to providea negative supply voltage to the memory cells; a first negative powersupply pattern formed on the second wiring layer, extending in thesecond direction, and connecting first power supply line landing pads,which are adjacent to each other in the second direction among theplurality of first power supply line landing pads, to each other; and asecond negative power supply pattern formed on the third wiring layerand connected to the first negative power supply pattern.
 15. Theintegrated circuit of claim 14, wherein the second negative power supplypattern on the third wiring layer extends in the first direction. 16.The integrated circuit of claim 14, the second negative power supplypattern is formed in a mesh pattern on the third wiring layer. 17.(canceled)
 18. An integrated circuit comprising a plurality memorycells, the integrated circuit comprising: a bit line structure and aword line structure; and a negative power supply line structurecomprising: a plurality of first power supply line landing pads formedon a first wiring layer, and configured to provide a negative supplyvoltage to the memory cells; a first negative power supply patternformed on a second wiring layer, and connecting first power supply linelanding pads, which are adjacent to each other among the plurality offirst power supply line landing pads, to each other; and a secondnegative power supply pattern formed on a third wiring layer andconnected to the first negative power supply pattern.
 19. The integratedcircuit of claim 18, wherein the word line structure comprises: aplurality of first word line landing pads formed on a first wiringlayer, and configured to provide a word line voltage to the memorycells; a plurality of first word line patterns formed on the secondwiring layer, and connected to the plurality of first word line landingpads; a plurality of second word line landing pads formed on the thirdwiring layer, and connected to the plurality of first word linepatterns; and a plurality of second word line patterns formed on afourth wiring layer, and connected to the plurality of second word linelanding pads.
 20. The integrated circuit of claim 19, wherein the fourthwiring layer does not include a bit line patter, a word line pattern, apositive power supply pattern, and a negative power supply pattern. 21.The integrated circuit of claim 18, wherein the second negative powersupply pattern on the third wiring layer extends in a first direction,and wherein the first negative power supply pattern formed on the secondwiring layer extends in a second direction.
 22. The integrated circuitof claim 18, wherein the bit line structure comprises: a first bit linepattern formed on a first wiring layer, configured to provide a bit linevoltage to the memory cells, and extending in a first direction; and asecond bit line pattern formed on the third wiring layer, and connectedto the bit line landing pad, and extending in the first direction.23-27. (canceled)